| PART |
Description |
Maker |
| W9812G2GB-6 W9812G2GB-6I W9812G2GB-75 W9812G2GB |
1M 】 4 BANKS 】 32BITS SDRAM
|
Winbond
|
| W9864G2IB |
512K X 4 BANKS X 32BITS SDRAM
|
Winbond
|
| W9864G2JH |
512K ?4 BANKS ?32BITS SDRAM
|
http://
|
| W9864G6 W9864G6DB W9864G6DB-7 |
1M x 4 BANKS x 16 BITS SDRAM
1M x 4 BANKS x 16 BITS SDRAM
From old datasheet system
BGA SDRAM
|
WINBOND[Winbond]
Winbond Electronics
|
| MT48LC32M16A2P-75ITC |
SDR SDRAM MT48LC128M4A2 ?32 Meg x 4 x 4 banks MT48LC64M8A2 ?16 Meg x 8 x 4 banks MT48LC32M16A2 ?8 Meg x 16 x 4 banks
|
Micron Technology
|
| W946432AD W946432A |
SDRAM 2Mx32
512K X 4 BANKS X 32 BITS DDR SDRAM
|
Winbond Electronics
WINBOND[Winbond]
|
| K4S560832A K4S560832A-TC_L1H K4S560832A-TC_L1L K4S |
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
IC,SDRAM,4X8MX8,CMOS,TSOP,54PIN,PLASTIC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S281633D-N1H K4S281633D-N1L K4S281633D-N75 K4S28 |
IC REG ULDO DUAL 2.8/1.5V 6-MLF
8Mx16 SDRAM 54CSP
2M x 16Bit x 4 Banks SDRAM in 54CSP Data Sheet
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S640832 K4S640832F K4S640832F-TL75 K4S640832F-TC |
Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC 0 to 70
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
IC,SDRAM,4X2MX8,CMOS,TSOP,54PIN,PLASTIC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronics Inc
|
| K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187
; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No
128Mb SDRAM, 3.3V, LVTTL, 166MHz
128Mb SDRAM, 3.3V, LVTTL, 183MHz
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| W942508CH W942508CH-75 W942508CH-5 W942508CH-6 W94 |
DDR SDRAM (Double Data Rate)
8M x 4 BANKS x 8 BIT DDR SDRAM
|
Winbond Electronics
WINBOND[Winbond]
|
| HMC550 HT6740 HYB25S1G800TCL-37 HFV6 HY5V22LF-P HY |
GAAS MMIC SPST FAILSAFE SWITCH, DC - 6 GHz
13.56MHz RFID Transponder
MEMORY SPECTRUM
AUTOMOTIVE RELAY
4 Banks x 1M x 32Bit Synchronous DRAM
4Banks x 2M x 32bits Synchronous DRAM
3.3 VOLT HIGH-DENSITY SUPERSYNC II36-BIT FIFO
|
美国讯泰微波有限公司上海代表
Holtek Semiconductor Inc.
Infineon Technologies AG
厦门宏发电声股份有限公司
Hynix Semiconductor Inc.
Integrated Device Technology, Inc.
|
